Structural relaxation in glass transition of chalcogenide amorphous semiconductors

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 552-555

  Matsuishi, Kiyoto ^a   Ogura, Hideki ^a   Onari, Seinosuke ^a   Arai, Toshihiro ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DIFFERENTIAL SCANNING CALORIMETRY; ENERGY GAP; GLASS TRANSITION; MORPHOLOGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SPECIFIC HEAT;

CHALCOGENIDE; KOHLRAUSCH-WILLIAMS-WATTS RELAXATION FUNCTION; MOYNIHAN FORMULATION; STRUCTURAL RELAXATION;

RELAXATION PROCESSES;

EID: 0030563514     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00761-X     Document Type: Article

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