Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasma

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 419-422

  Azuma, M ^a   Yokoi, T ^a   Shimizu, I ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; DEFECTS; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC DENSITY OF STATES; FABRICATION; FERMI LEVEL; FILM GROWTH; HYDROGEN; SATURATION (MATERIALS COMPOSITION); STABILITY;

HYDROGEN PLASMA; LIGHT SOAKING; OPTICAL GAP;

AMORPHOUS FILMS;

EID: 0030563502     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00708-3     Document Type: Article

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