Measurement of carrier lifetime in materials exhibiting anomalous dispersion

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 182-185

  Marshall, J M ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS;

ANOMALOUS DISPERSION; CARRIER DRIFT MOBILITY; CARRIER LIFETIME MEASUREMENT; DISORDERED SEMICONDUCTORS; SHALLOW TRAPPING CENTERS; TIME OF FLIGHT TECHNIQUE;

SEMICONDUCTOR MATERIALS;

EID: 0030563501     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)80021-4     Document Type: Article

References (7)

1. J.M. Marshall, Rep. Prog. Phys. 46 (1982) 1235.
2. J.M. Marshall, in: Amorphous Silicon and Related Materials, ed. H. Fritzsche (World Scientific, Singapore, 1989) p. 799.
3. K. Hecht, Z. Phys. 77 (1932) 235.
4. J.M. Marshall, R.A. Street and M.J. Thompson, Philos. Mag. B54 (1976) 51.
5. M. Pollak, Philos. Mag. 36 (1977) 1157.
6. J.M. Marshall, Philos. Mag. 36 (1977) 358.
7. P.A. Bayley and J.M. Marshall, Philos. Mag. B23 (1996) 429.