|
Volumn 163, Issue 1-2, 1996, Pages 122-127
|
Ising model analysis of the formation mechanism of ordered structures in III-V alloy semiconductors
a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ALLOYS;
COMPUTER SIMULATION;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL MICROSTRUCTURE;
ELECTRON DIFFRACTION;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
MORPHOLOGY;
SEMICONDUCTOR MATERIALS;
ALLOY SEMICONDUCTORS;
ATOMIC CONFIGURATION;
EPILAYERS;
FORMATION MECHANISM;
ISING MODEL ANALYSIS;
ORDERED STRUCTURES;
EPITAXIAL GROWTH;
|
EID: 0030563479
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)01043-2 Document Type: Article |
Times cited : (2)
|
References (26)
|