SCOPUS 정보 검색 플랫폼

Volumn 198-200, Issue PART 1, 1996, Pages 596-600

Compositional, optoelectronic and structural properties of amorphous silicon-nitrogen alloys deposited by plasma enhanced chemical vapor deposition

(10) Giorgis, F c Rava, P a Galloni, R b Rizzoli, R b Summonte, C b Crovini, G c Demichelis, F c Pirri, C F c Tresso, E c Rigato, V d

a Elettrorava SpA (Italy)

b CNR (Italy)

c POLITECNICO DI TORINO (Italy)

d UNIVERSITY OF PADOVA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC PROPERTIES; ELECTROOPTICAL EFFECTS; ENERGY GAP; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SILANES; SILICON ALLOYS; STRUCTURE (COMPOSITION);

AMORPHOUS SILICON CARBON FILMS; OPTOELECTRIC PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS ALLOYS;

EID: 0030563445 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(95)00770-9 Document Type: Article

Times cited : (7)

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