Comments on space-charge-limited time-of-flight measurements in post-transit mode, applied to a-Si:H based solar cells

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 190-193

  Fejfar, A ^a   Juska G ^b   Kocka J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; DEGRADATION; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC SPACE CHARGE; ELECTRONIC DENSITY OF STATES; ELECTRONS; MATHEMATICAL MODELS; SILICON SOLAR CELLS; TRANSIENTS;

AMORPHOUS SILICON HYDROGEN SOLAR CELLS; HOLE POST EXTRACTION; POST TRANSIT MODE; SPACE CHARGE LIMITED TIME OF FLIGHT MEASUREMENTS; WEAK BOND DANGLING BOND CONVERSION MODEL;

ELECTRIC CURRENT MEASUREMENT;

EID: 0030563432     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00679-6     Document Type: Article

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