The hydrogenated amorphous silicon/nanodisperse metal (SIMAL) system - Films of unique electronic properties

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 829-832

  Drüsedau, Tilo P ^a   Panckow, Andreas N ^a   Klabunde, Frank ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; METALS; SEMICONDUCTING FILMS; SPUTTERING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

COPLANAR ELECTRODE CONFIGURATION; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; HYDROGENATED AMORPHOUS SILICON; INTERMIXED SILICON METAL PHASE; NANOCLUSTERS; NANODISPERSE METAL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING FORCE MICROSCOPY; THERMAL EVAPORATION; X RAY TECHNIQUES;

MULTILAYERS;

EID: 0030563404     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00050-6     Document Type: Article

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