Density of states and photoconductivity light degradation in a-Si:H at different temperatures

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 482-485

  Mariucci, L ^a   Sinno, G ^a   Minarini, C ^a   Mittiga, A ^a  

^a ENEA CR Portici   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; DEGRADATION; ELECTRONIC DENSITY OF STATES; ENERGY GAP; LIGHT; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; THERMAL EFFECTS;

LIGHT DEGRADATION PROCESS; RECOMBINATION INDUCED BOND BREAKING MODEL; STRETCHED EXPONENTIAL MODEL;

AMORPHOUS SILICON;

EID: 0030563399     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00746-6     Document Type: Article

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