A study of base contact formation in epitaxial Si/Si0.88Ge0.12 HBT structures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 305-310

  Nejim, A ^a   Cristiano, F ^a   Hemment, P L F ^a   Hope, D A O ^b   Glasper, J L ^b   Pickering, C ^b   Leong, W Y ^b   Robbins, D J ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DENSITY; LOW DOPED EMITTER; RAPID THERMAL PROCESSING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030563377     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01241-9     Document Type: Article

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