Light-intensity dependence of excess carrier lifetimes

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 271-275

  Adriaenssens, G J ^a   Baranovskii, S D ^a,b   Fuhs, W ^b   Jansen, J ^a   Oktu O ^a,c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c HACETTEPE UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC CONDUCTIVITY MEASUREMENT; ENERGY GAP; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; PROBABILITY; SEMICONDUCTOR MATERIALS;

EXCESS CARRIER LIFETIMES; GENERAL MULTIPLE TRAPPING FORMALISM; LIGHT INTENSITY DEPENDENCE; PHOTOCARRIER RECOMBINATION LIFETIMES;

CARRIER CONCENTRATION;

EID: 0030563355     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00715-6     Document Type: Article

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