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Volumn 198-200, Issue PART 1, 1996, Pages 146-152
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The moving-photocarrier-grating technique for the determination of transport parameters in thin film semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
ELECTRIC FIELDS;
ELECTRONS;
LASER BEAMS;
LIGHTING;
SEMICONDUCTOR MATERIALS;
SHORT CIRCUIT CURRENTS;
THIN FILMS;
VELOCITY MEASUREMENT;
AMORPHOUS HYDROGENATED SILICON;
CARRIER MOBILITIES;
DRIFT VELOCITY;
FREQUENCY SHIFTED LASER BEAMS;
GRATING VELOCITY DEPENDENCE;
MOVING INTERFERENCE PATTERN;
MOVING PHOTOCARRIER GRATING TECHNIQUE;
PHOTOCARRIER LIFETIME;
TRANSPORT PARAMETER;
ELECTRON TRANSPORT PROPERTIES;
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EID: 0030563354
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-3093(95)00667-2 Document Type: Article |
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Times cited : (8)
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References (9)
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