Ion beam synthesis by tungsten-implantation into 6H-silicon carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 338-341

  Weishart, H ^a   Steffen, H J ^a   Matz, W ^a   Voelskow, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; TUNGSTEN; X RAY DIFFRACTION;

IMPLANTATION SPUTTERING; ION BEAM SYNTHESIS; TUNGSTEN CARBIDE; TUNGSTEN SILICIDE;

ION BEAM LITHOGRAPHY;

EID: 0030563352     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01245-1     Document Type: Article

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