Defect-pool model for doped a-Si:H

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 387-390

  Schmal, J ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGENTS; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; FERMI LEVEL; MATHEMATICAL MODELS; THIN FILMS;

DEFECT DISTRIBUTION; DEFECT POOL MODEL;

AMORPHOUS SILICON;

EID: 0030563299     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00735-0     Document Type: Article

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