Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configuration

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 259-262

  Zelikson, M ^a   Weiser, K ^a   Kanicki, J ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); LIGHT ABSORPTION; LIGHT MEASUREMENT; OPTICAL WAVEGUIDES; SEMICONDUCTING FILMS; SPECTROSCOPY;

EXCITATION SPECTROSCOPY; HYDROGENATED AMORPHOUS SILICON; LOCALIZED INTERFACE STATES; PHOTOABSORPTION TECHNIQUES;

AMORPHOUS SILICON;

EID: 0030563297     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00706-7     Document Type: Article

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