Theory of room temperature quantized resistance effects in metal-a-Si:H-metal thin film structures

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 825-828

  Hajto, J ^a   McAuley, B ^b   Snell, A J ^b   Owen, A E ^b  

^a EDINBURGH NAPIER UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; FERMI SURFACE; GEOMETRY; MATHEMATICAL MODELS; QUANTUM THEORY; VECTORS;

ELECTRON CONFINEMENT; ELECTRON LIFETIME; FERMI WAVEVECTOR; NON PERIODICITY; ROOM TEMPERATURE QUANTIZATION; ROOM TEMPERATURE QUANTIZED RESISTANCE EFFECTS; SCHRODINGER EQUATION;

THIN FILM DEVICES;

EID: 0030563290     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00048-8     Document Type: Article

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