Laser spot size dependence of photo-induced crystallization process in amorphous GeSe2 film

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 740-743

  Nakamura, Mitsutaka ^a   Wang, Yong ^a   Matsuda, Osamu ^a   Inoue, Koichi ^a   Murase, Kazuo ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRIC EXCITATION; IRRADIATION; LASER APPLICATIONS; MATHEMATICAL MODELS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS;

GROWTH PROBABILITY; LASER SPOT SIZE DEPENDENCE; PHOTOINDUCED CRYSTALLIZATION; THRESHOLD EXCITATION POWER DENSITY;

AMORPHOUS FILMS;

EID: 0030563289     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00127-5     Document Type: Article

References (8)

1. J.E. Griffiths, G.P. Espinosa, J.P. Remeika and J.C. Phillips, Solid State Commun. 40 (1981) 1077.
2. K. Murase and K. Inoue, in: Disordered Semiconductors, ed. M.A. Kastner, G.A. Thomas and S.R. Ovshinsky (Plenum Press, New York, 1987) p. 297.
3. K. Inoue, K. Kawamoto and K. Murase, J. Non-Cryst. Solids 95&96 (1987) 517.
4. K. Murase, K. Inoue and O. Matsuda, in: Current Topics in Amorphous Materials - Science and Technology, ed. Y. Sakurai, Y. Hamakawa, T. Matsumoto, K. Shirae and K. Suzuki (Elsevier, Amsterdam, 1993) p. 47.
5. O. Matsuda, H. Oe, K. Inoue and K. Murase, J. Non-Cryst. Solids 192&193 (1995) 524.
6. K. Inoue, O. Matsuda and K. Murase, Solid State Commun. 79 (1991) 905.
7. M. Lax, J. Appl. Phys. 48 (1977) 3919.
8. M. Lax, Appl. Phys. Lett. 33 (1978) 786.