Visible electroluminescence from crystallized a-Si:H/a-SiNX:H multiquantum well structures

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 833-836

  Chen, Kunji ^a,b   Wang, Mingxiang ^a   Shi, Weihua ^a   Jiang, Lai ^a   Li, Wei ^a   Xu, Jun ^a   Huang, Xinfan ^a,b  

^a NANJING UNIVERSITY   (China)

^b Natl Lab Superlattices M   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CURRENT DENSITY; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; LIGHT EMISSION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

ARGON ION LASER ANNEALING TECHNIQUE; CARRIER INJECTION; MULTIQUANTUM WELL STRUCTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTIZED STATES; RADIATIVE RECOMBINATION; VISIBLE ELECTROLUMINESCENCE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030563279     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00058-0     Document Type: Article

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