The relationship between hydrogen and electronic defects in amorphous silicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 295-299

  Deane, S C ^a   Powell, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEHYDROGENATION; DIFFUSION; ELECTRONIC DENSITY OF STATES; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES;

DEFECT POOL MODEL; HYDROGEN DENSITY OF STATES; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0030563277     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00690-7     Document Type: Article

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