Geminate and non-geminate recombination in amorphous silicon (a-Si:H)

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 251-254

  Schubert, Meinolf ^a   Stachowitz, Ruben ^a   Fuhs, Walther ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ENERGY GAP; MATHEMATICAL MODELS; REACTION KINETICS; SPECTROSCOPY;

DUNSTAN DISTANT PAIR MODEL; GEMINATE DISTRIBUTION; HYDROGENATED AMORPHOUS SILICON; NON-GEMINATE PROCESSES; QUADRATURE FREQUENCY RESOLVED SPECTRUM; RECOMBINATION PROCESSES;

AMORPHOUS SILICON;

EID: 0030563247     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00698-2     Document Type: Article

References (9)

1. R.A. Street, Ada. Phys. 30 (1981) 593.
2. C. Tsang and R.A. Street, Phys. Rev. B19 (1979) 3027.
3. M. Bort, W. Fuhs, S. Liedtke, R. Stachowitz and R. Carius, Philos. Mag. Lett. 64 (1991) 227.
4. F. Boulitrop and D.J. Dunstan, Solid State Commun. 44 (1982) 841.
5. D.J. Dunstan, Philos. Mag. B46 (1982) 579.
6. M. Schubert, R. Stachowitz, R. Saleh and W.J. Fuhs, J. Non-Cryst. Solids 164-166 (1993) 555.
7. R. Stachowitz, M. Schubert and W. Fuhs, Phys. Rev. B52 (1995) 10906.
8. R. Stachowitz, M. Schubert and W. Fuhs, Philos. Mag. B70 (1994) 1219.
9. H. Oheda, J. Non-Cryst. Solids 164-166 (1993) 559.