Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 133-138

  Fedina, L ^a,c   Van Landuyt, J ^a   Vanhellemont, J ^b   Aseev, A L ^c  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b IMEC   (Belgium)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALS; RADIATION EFFECTS; SILICON; SUPERSATURATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

FLOATING ZONE SILICON CRYSTALS; HIGH VOLTAGE ELECTRON MICROSCOPES; INTERSTITIAL CLUSTERS; VACANCY ACCUMULATION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0030563238     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01277-X     Document Type: Article

References (10)

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