Characterization of hydrogenated amorphous silicon prepared by ion beam assisted evaporation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 263-266

  Hadj Zoubir, N ^a   Rinnert, H ^a   Vergnat, M ^a   Marchal, G ^a   Burneau, A ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; EVAPORATION; HYDROGENATION; INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ELECTRON CYCLOTRON RESONANCE; HYDROGENATED AMORPHOUS SILICON; ION BEAM ASSISTED EVAPORATION; THERMAL DESORPTION SPECTROMETRY;

ION BEAM LITHOGRAPHY;

EID: 0030563236     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01234-6     Document Type: Article

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