Photocreated neutral dangling bonds in N-doped and undoped a-Si:H films

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 495-498

  Zhang, Qing ^a   Takashima, Hideki ^a   Kumeda, Minoru ^a   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ANNEALING; CHARGE CARRIERS; CHEMICAL BONDS; MAGNETIC VARIABLES MEASUREMENT; NITROGEN; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING;

HYDROGENATED AMORPHOUS SILICON; LIGHT SOAKING; PHOTOCREATED NEUTRAL DANGLING BONDS;

SEMICONDUCTING FILMS;

EID: 0030563220     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00757-1     Document Type: Article

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