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Volumn 198-200, Issue PART 1, 1996, Pages 161-164
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Determination of the density of states in amorphous silicon-carbon alloys using a Fourier transformation of transient photocurrent data
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC CURRENTS;
ELECTRONIC DENSITY OF STATES;
ENERGY GAP;
FOURIER TRANSFORMS;
SEMICONDUCTING FILMS;
AMORPHOUS SILICON CARBON ALLOYS;
CARBON CONCENTRATION;
CONDUCTION BAND TAIL STATES;
FREQUENCY DOMAIN;
GAP STATES;
MODULATED PHOTOCURRENT;
TRANSIENT PHOTOCURRENT DECAY MEASUREMENT;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0030563216
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-3093(96)80018-4 Document Type: Article |
Times cited : (2)
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References (10)
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