Atomistic study on solid phase epitaxy processes on Si(100) surfaces by the scanning tunneling microscope

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 78-85

  Yao, T ^a,b   Uesugi, K ^c   Komura, T ^d   Yoshimura, M ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

^e Toyoda Engineering University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CRYSTAL DEFECTS; CRYSTALLIZATION; EVAPORATION; ION IMPLANTATION; SCANNING TUNNELING MICROSCOPY; SPUTTER DEPOSITION; SURFACES;

AMORPHOUS SILICON LAYERS; ARGON ION SPUTTERING; CRYSTALLINITY; ENERGETIC IMPINGING PARTICLES; PHOSPHORUS ION IMPLANTATION; SOLID PHASE EPITAXY PROCESSES; SURFACE DAMAGE; VACUUM EVAPORATION;

EPITAXIAL GROWTH;

EID: 0030563212     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01038-6     Document Type: Article

References (18)

1. Csepregi, E.F. Kennedy, J.W. Mayer and T.W. Sigmon, J. Appl. Phys. 49 (1978) 3906.
2. S.S. Lau, S. Matteson, J.W. Mayer, P. Revesz, J. Gyulai, J. Roth, T.W. Sigmon and T. Cass, Appl. Phys. Lett. 34 (1979) 76.
3. H. Ishiwara, H. Yamamoto and S. Furukawa, Appl. Phys. Lett. 43 (1983) 1028.
4. S. Saitoh, T. Sugii, H. Ishiwara and S. Furukawa, Jpn. J. Appl. Phys. 20 (1981) L130.
5. L.S. Hung, S.S. Lau, M. von Allmen, J.W. Mayer, B.M. Ullrich, J.E. Baker and P. Williams, Appl. Phys. Lett. 37 (1980) 909.
6. Y. Kunii, M. Tabe and K. Kajiyama, Jpn. J. Appl. Phys. 21 (1982) 1431.
7. L. Csepregi, J.W. Mayer and T.W. Sigmon, Phys. Lett. A 54 (1975) 157.
8. K. Uesugi, T. Yao, T. Sato, T. Sueyoshi and M. Iwatsuki, Appl. Phys. Lett. 62 (1993) 1600.
9. K. Uesugi, M. Yoshimura, T. Sato, T. Sueyoshi, M. Iwatsuki and T. Yao, Jpn. J. Appl. Phys. 32 (1993) 6203.
10. T. Yao, K. Uesugi, M. Yoshimura, T. Sato, T. Sueyoshi and M. Iwatsuki, Appl. Phys. Sci. 75 (1994) 139.
11. K. Uesugi, M. Yoshimura, T. Yao, T. Sato, T. Sueyoshi and M. Iwatsuki, J. Vac. Sci. Technol. B 12 (1994) 2018.
12. K. Uesugi, T. Komura, M. Yoshimura and T. Yao, Appl. Surf. Sci. 82/83 (1994) 367.
13. R.M. Feenstra and G.S. Oehrlein, Appl. Phys. Lett. 47 (1985) 97.
14. I.H. Wilson, N.J. Zheng, U. Knipping and I.S.T. Tsong, J. Vac. Sci. Technol. A 7 (1989) 2840.
15. Z. Zhang and H. Metiu, Surf. Sci. 245 (1991) 353.
16. R.J. Hamers and U.K. Koher, J. Vac. Sci. Technol. A 7 (1989) 2854.
17. A. Natori, private communication.
18. K. Uesugi, M. Yoshimura and T. Yao, private communication.