SCOPUS 정보 검색 플랫폼

Volumn 96-98, Issue , 1996, Pages 866-869

Laser reactive ablation deposition of silicon carbide films

(10) Leggieri, G a Luches, A a Martino, M a Perrone, A a Alexandrescu, R b Barborica, A b Gyorgy, E b Mihailescu, I N b Majni, G a Mengucci, P a

a INFM (Italy)

b INSTITUTE OF ATOMIC PHYSICS (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DEPOSITION; LASER ABLATION; LASER PULSES; METHANE; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SILICON WAFERS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FLUENCE; LASER REACTIVE ABLATION; PULSE DURATION; REPETITION RATE;

THIN FILMS;

EID: 0030563077 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(95)00568-4 Document Type: Article

Times cited : (23)

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