Photon-induced dry etching of Si(100) in the VUV

Applied Surface Science

Volumn 96-98, Issue , 1996, Pages 448-452

  Streller, U ^a   Li, B ^a   Krabbe, A ^a   Schwentner, N ^a  

^a FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ARGON; HALOGEN COMPOUNDS; MASKS; PHOTONS; PROBABILITY; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SILICON WAFERS; SYNCHROTRON RADIATION; TOPOLOGY;

AMPLIFICATION FACTOR; ELECTRONIC RADIATION; EXCITATION PROBABILITY; MONOCHROMATIZED RADIATION; PHOTON INDUCED DRY ETCHING; THIN FLUOROSILYL LAYER;

DRY ETCHING;

EID: 0030563023     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00456-4     Document Type: Article

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