Growth-induced interface roughness of GaAs/AlAs-layers studied by X-ray scattering under grazing angles

Physica B: Condensed Matter

Volumn 221, Issue 1-4, 1996, Pages 27-33

  Klemradt, U ^a   Funke, M ^b   Fromm, M ^a   Lengeler, B ^c   Peisl, J ^a   Forster A ^b  

^a UNIVERSITY OF MUNICH   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE SCATTERING; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS;

GRAZING ANGLES; X RAY SCATTERING;

INTERFACES (MATERIALS);

EID: 0030563011     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00901-9     Document Type: Article

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