Micro-Raman study of UV laser ablation of GaAs and Si substrates

Applied Surface Science

Volumn 96-98, Issue , 1996, Pages 370-375

  Garcia C ^a   Ramos, J ^a   Prieto, A C ^a   Jimenez J ^a   Geertsen, C ^b,c   Lacour, J L ^b   Mauchien, P ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b CEA SACLAY   (France)

^c ALCAN INTERNATIONAL LIMITED   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTALLIZATION; INTERFEROMETRY; LASER ABLATION; LASER BEAMS; MORPHOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE TREATMENT; ULTRAVIOLET RADIATION;

ATOMIC DESORPTION; OPTICAL INTERFEROMETRY TECHNIQUE; PHASE STEPPING MICROSCOPY; PULSED YTTRIUM ALUMINUM GARNET LASER; SURFACE TOPOGRAPHY; ULTRAVIOLET LASER ABLATION;

SEMICONDUCTOR MATERIALS;

EID: 0030562994     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00488-2     Document Type: Article

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