Field emission characteristics of polycrystalline and single-crystalline diamond grown on Si tips

Applied Surface Science

Volumn 94-95, Issue , 1996, Pages 117-122

  Givargizov, E I ^a   Zhirnov, V V ^a   Stepanova, A N ^a   Plekhanov, P S ^a   Kozlov, R I ^a  

^a SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COATINGS; CRYSTAL GROWTH; DIAMOND FILMS; ELECTRON DEVICES; HYSTERESIS; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS;

DIAMOND COATINGS; EMISSION CURRENT; FIELD EMISSION; FOWLER-NORDHEIM EMISSION LAW; NORMAL BEHAVIOR; SILICON FIELD EMITTERS; SILICON TIPS;

ELECTRON EMISSION;

EID: 0030562743     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00360-6     Document Type: Article

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