New type of GMR memory

Journal of Magnetism and Magnetic Materials

Volumn 155, Issue 1-3, 1996, Pages 161-163

  Wang, Zhigang ^a   Nakamura, Yoshihisa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIALS; HARD DISK STORAGE; MAGNETIC ANISOTROPY; MAGNETIC MATERIALS; MAGNETIC THIN FILMS; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; REMANENCE; STRUCTURE (COMPOSITION);

BINARY DIGIT STORING; COMPACT STRUCTURE; GMR MEMORY; HARD MAGNETIC COMPONENT; MAGNETORESISTIVE RANDOM ACCESS STORAGE; MEMORY CELLS; SOFT COMPONENT; STORAGE MECHANISM;

MAGNETIC STORAGE;

EID: 0030562637     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/0304-8853(95)00726-1     Document Type: Article

References (2)

1. Z. Wang Y. Nakamura Proc. IEICE General Conference March 10, 1995 C 502
2. J.M. Daughton Thin Solid Film 216 1992 162