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Volumn 159, Issue 1-4, 1996, Pages 510-513
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Growth, structural and optical characterization of MBE ZnCdSe/ZnSe quantum wells
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VARIABLES CONTROL;
IMAGE ANALYSIS;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
PLASMAS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
CADMIUM CONCENTRATION;
DYNAMICAL DIFFRACTION THEORY;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
HIGH RESOLUTION X RAY DIFFRACTION;
HYDROGEN PLASMA;
OPTICAL CHARACTERIZATION;
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY;
SEMICONDUCTOR GROWTH;
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EID: 0030562491
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00808-X Document Type: Article |
Times cited : (1)
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References (6)
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