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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 667-671

A comparison of lasing mechanisms in ZnSe and GaAs

(2) Galbraith, I a Koch, S W b

a HERIOT WATT UNIVERSITY (United Kingdom)

b PHILIPPS UNIVERSITY MARBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CALCULATIONS; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRONS; EXCITONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SPECTRUM ANALYSIS;

GAIN SPECTRUM; LASING MECHANISMS; MOTT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0030562421 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00862-4 Document Type: Article

Times cited : (24)

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