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Volumn 159, Issue 1-4, 1996, Pages 498-501

Band-offset determination in Zn1-xCdxSe/ZnSe multiple quantum wells

(6) Pellegrini, Vittorio a Tredicucci, Alessandro a Beltram, Fabio a Vanzetti, Lia b Lazzarino, Marco b Franciosi, Alfonso b

a SCUOLA NORMALE SUPERIORE (Italy)

b INFM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

CADMIUM CONCENTRATION; CONDUCTION BAND DISCONTINUITIES; ELECTRICAL ABSORPTION MEASUREMENT; INTERSUBBAND ABSORPTION MEASUREMENT; LIGHT HOLE CONFINEMENT; MULTIPLE QUANTUM WELL STRUCTURE; SEMICONDUCTING ZINC CADMIUM SELENIDE; SEMICONDUCTING ZINC SELENIDE; THERMIONIC EMISSION; VALENCE BAND DISCONTINUITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030562418 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00584-6 Document Type: Article

Times cited : (7)

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