Investigation of the transition range in seeded vapour grown ZnSe crystals

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 175-180

  Geissler, U ^a   Hartmann, H ^a   Krause, E ^a   Siche, D ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; EXCITONS; INTERFACES (MATERIALS); LUMINESCENCE; PHASE TRANSITIONS; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS;

CRYSTAL QUALITY; EXCITON LUMINESCENCE; OPTICALLY ACTIVE DEEP LEVEL DEFECTS; SEEDED CHEMICAL VAPOUR TRANSPORT METHOD; SEEDED PHYSICAL VAPOUR TRANSPORT METHOD; SELF ACTIVATED CENTRE;

CRYSTAL GROWTH;

EID: 0030562414     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00787-3     Document Type: Article

References (9)

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7. H. Hartmann, R. Mach and B. Selle, Wide Gap II-VI Compounds as Electronic Materials, in: Current Topics in Materials Science, Vol. 9, Ed. E. Kaldis (North-Holland, Amsterdam, 1982).
8. Yu.V. Korostelin, private communication; P.N. Lebedev, Physics Institute, Moscow, Russian Federation.
9. Yu.V. Korostelin, private communication; P.N. Lebedev, Physics Institute, Moscow, Russian Federation.