Growth of p-type ZnSe by metalorganic vapor phase epitaxy using ethylazide as a new nitrogen source

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 130-133

  Inoue, K ^a   Yanashima, K ^a   Takahashi, T ^a   Hwang, J S ^a   Hara, K ^a   Munekata, H ^a   Kukimoto, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; HYDROGEN BONDS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

EPILAYERS; ETHYLAZIDE; THERMAL ANNEALING; ZINC SELENIDE;

EPITAXIAL GROWTH;

EID: 0030562402     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00760-1     Document Type: Article

References (7)

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