Low temperature magnetoresistance of the persistent photoconductor Cd0.9Mn0.1Te:In

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1070-1074

  Terry, I ^a   Penney, T ^b   Von Molnar S ^c   Becla, P ^d  

^a DURHAM UNIVERSITY   (United Kingdom)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c FLORIDA STATE UNIVERSITY   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; LOW TEMPERATURE PROPERTIES; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MAGNETORESISTANCE; MATHEMATICAL MODELS; PHOTOCONDUCTING MATERIALS; TRANSPORT PROPERTIES;

BRILLOUIN FUNCTIONS; CADMIUM MANGANESE TELLURIDE; MAGNETIC POLARONS; PHOTOCARRIER CONCENTRATION; SUBBANDGAP RADIATION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030562356     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00695-8     Document Type: Article

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