The role of defects on radiative transitions in nitrogen doped ZnSe

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 329-333

  Hauksson, I S ^a,b   Suda, J ^a   Tsuka, M ^a   Kawakami, Y ^a   Fujita, Sz ^a   Fujita, Sg ^a  

^a KYOTO UNIVERSITY   (Japan)

^b HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRON EMISSION; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; EXCITONS; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; SUBSTRATES;

DEFECT CONCENTRATION; FREE EXCITON EMISSIONS; METALORGANIC MOLECULAR BEAM EPITAXY; OSCILLATOR STRENGTH; TIME RESOLVED SPECTROSCOPY;

CRYSTAL DEFECTS;

EID: 0030562352     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00585-4     Document Type: Article

References (7)

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