Critical point parameters deduced from the dielectric function in HgZnTe and CdZnTe alloys

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1112-1116

  Castaing, O ^a   Benhlal, J T ^a   Granger, R ^a   Triboulet, R ^b  

^a INSA DE RENNES   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; APPROXIMATION THEORY; BAND STRUCTURE; DIELECTRIC PROPERTIES; ELECTRON TRANSITIONS; ELLIPSOMETRY; ENERGY GAP; SPECTROSCOPY;

CADMIUM ZINC TELLURIDE; COHERENT POTENTIAL APPROXIMATION; CRITICAL POINT PARAMETERS; INTERBAND TRANSITION ENERGIES; MERCURY ZINC TELLURIDE; SPECTROSCOPIC ELLIPSOMETRY; VIRTUAL CRYSTAL APPROXIMATION;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0030562351     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00874-8     Document Type: Article

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