Wurtzite ZnxCd1-xS layers grown by combining MBE and hot-wall beam epitaxy

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 81-84

  Hetterich, M ^a   Petillon, S ^a   Petri, W ^a   Dinger, A ^a   Grun M ^a   Klingshirn, C ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; EXCITONS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY CRYSTALLOGRAPHY; ZINC ALLOYS;

BUFFER LAYER; EFFUSION CELLS; HOT WALL BEAM EPITAXY; HOT WALL CELL; WURTZITE MODIFICATION;

EPITAXIAL GROWTH;

EID: 0030562320     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00783-0     Document Type: Article

References (5)

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4. M.A. Herman and H. Sitter, Molecular Beam Epitaxy (Springer, Berlin, 1989) p. 108.
5. M. Grün, M. Hetterich, U. Becker, H. Giessen and C. Klingshirn, J. Crystal Growth 141 (1994) 68.