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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 839-842

Picosecond photoluminescence properties of CdTe-ZnTe superlattices prepared by hot-wall epitaxy

(6) Kuwabara, H a Asai, H a Tatsuoka, H a Nakamura, T a Nakanishi, Y a Fujiyasu, H a

a SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DYE LASERS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANNIHILATION; EXCITON LUMINESCENCE BAND; EXCITON RECOMBINATION; HOT WALL EPITAXY; PHOTOEXCITED CARRIER RELAXATION; PHOTOLUMINESCENCE SPECTROSCOPY; PICOSECOND TIME RESOLVED PHOTOLUMINESCENCE SPECTRA; STRAINED LAYER SUPERLATTICES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0030562298 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00811-X Document Type: Article

Times cited : (6)

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