Boron implantation into CdTe

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 359-362

  Oldekop, E ^a   Hermann, S ^a   Sulzer, G ^a   Niedermeyer, F ^a   Wienecke, M ^b   Zeitz, W D ^a  

^a HMI Berlin   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; CHARACTERIZATION; CRYSTAL DEFECTS; CRYSTALS; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; THERMAL EFFECTS;

BORON IMPLANTATION; DIAMAGNETIC CHARGE STATE; ELECTRIC FIELD COUPLING CONSTANT; LARMOR FREQUENCY;

ION IMPLANTATION;

EID: 0030562237     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00792-X     Document Type: Article

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