|
Volumn 159, Issue 1-4, 1996, Pages 36-40
|
MBE growth of ZnCdSe and MgZnCdSe alloys on InP substrates with a GaInAs buffer-layer
a
NEC CORPORATION
(Japan)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DESORPTION;
MAGNESIUM ALLOYS;
METALLIC FILMS;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SUBSTRATES;
SURFACES;
ZINC ALLOYS;
BUFFER LAYER;
EXCITONIC EMISSION;
FULL WIDTH AT HALF MAXIMUM;
THERMAL DAMAGE;
X RAY ROCKING CURVES;
EPITAXIAL GROWTH;
|
EID: 0030562235
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00575-7 Document Type: Article |
Times cited : (15)
|
References (8)
|