Near band-edge emission in strained MBE-grown ZnS

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 89-93

  Ozanyan, K B ^a   May, L ^a   Nicholls, J E ^a   Hogg, J H C ^a   Hagston, W E ^a   Lunn, B ^a   Ashenford, D E ^a  

^a UNIVERSITY OF HULL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; ELECTRON EMISSION; ELECTRON TRANSITIONS; EXCITONS; LATTICE CONSTANTS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; STRAIN;

STRAIN RELAXATION; TENSILE BIAXIAL STRAIN; VALENCE BANDS;

SEMICONDUCTOR GROWTH;

EID: 0030562217     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00731-8     Document Type: Article

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