Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 50-53

  Hutchins, J W ^a   Parameshwaran, B ^a   Skromme, B J ^a,c   Smith, David J ^a   Sivananthan, S ^b  

^a Arizona State University   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ENERGY GAP; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; LIGHT EMITTING DIODES; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BANDGAPS; OPTICAL CHARACTERIZATION; QUATERNARY ALLOYS; SEPARATE CONFINEMENT HETEROSTRUCTURE; WAVELENGTH LASERS;

ZINC ALLOYS;

EID: 0030562198     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00854-3     Document Type: Article

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