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Volumn 92, Issue , 1996, Pages 193-197
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The properties of SiO 2 films using direct photo-chemical vapor deposition on strained SiGe layers
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CAPACITANCE MEASUREMENT;
CHEMICAL VAPOR DEPOSITION;
ELECTRIC CHARGE;
LIGHT SOURCES;
PRESSURE EFFECTS;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICA;
SURFACE PROPERTIES;
VOLTAGE MEASUREMENT;
DEPOSITION RATE;
DIRECT PHOTO CHEMICAL VAPOR DEPOSITION;
FLAT BAND VOLTAGE;
INTERFACE TRAP DENSITY;
METAL OXIDE SEMICONDUCTOR DIODES;
OXIDE CHARGE;
SILICON DIOXIDE FILMS;
SEMICONDUCTING FILMS;
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EID: 0030562193
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(95)00228-6 Document Type: Article |
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Times cited : (2)
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References (7)
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