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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 480-484

Composition dependent determination of band offsets in ZnCdSe/ZnSe and ZnSe/ZnSSe SQW by optical means

(6) Lankes, S a Reisinger, T a Hahn, B a Meier, C a Meier, M a Gebhardt, W a

a UNIVERSITY OF REGENSBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

BAND OFFSETS; ENVELOPE FUNCTION FORMALISM; EXCITED EXCITONIC STATES; EXCITONIC ABSORPTION MODEL; HOLE MASSES; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PHOTOREFLECTANCE SPECTROSCOPY; STRAIN EFFECTS; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030562183 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00637-0 Document Type: Article

Times cited : (14)

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