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Volumn 92, Issue , 1996, Pages 311-320

Interface phase transition as observed in ultra thin FeSi 2 epilayers

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; INTERFACES (MATERIALS); OPTICAL PROPERTIES; PHASE TRANSITIONS; PHYSICAL PROPERTIES; SEMICONDUCTING SILICON; STABILIZATION; SURFACE TREATMENT; THERMAL EFFECTS; ULTRATHIN FILMS;

EID: 0030562174     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(95)00248-0     Document Type: Article
Times cited : (10)

References (36)
  • 10
    • 85061690696 scopus 로고
    • 2 heteroepitaxy at the last IVC 12-ICSS 8 conferences
    • 2 heteroepitaxy at the last IVC 12-ICSS 8 conferences. Proc. in Appl. Surf. Sci. 70/71 (1993).
    • (1993) Proc. in Appl. Surf. Sci. , vol.70-71
  • 23
    • 85029989951 scopus 로고
    • Thesis, Université Paris VI
    • H. Alaoui, Thesis, Université Paris VI (1992).
    • (1992)
    • Alaoui, H.1
  • 34
    • 0000459251 scopus 로고
    • N. Onda, J. Henz, E. Muller, K.M. Mäder and H. von Kanel, Appl. Surf. Sci. 56-58 (1992) 421; Phys. Rev. B 47 (1993) 10567
    • (1993) Phys. Rev. B , vol.47 , pp. 10567


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.