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Journal of Crystal Growth

Volumn 158, Issue 3, 1996, Pages 217-223

Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps

(5) Bolkhovityanov, Yu B a Jaroshevich, A S a Nomerotsky, N V a Revenko, M A a Trukhanov, E M a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; FILM GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SOLID SOLUTIONS; STRAIN; SUBSTRATES; THIN FILMS;

BAND GAPS; ELASTIC STRAIN; ENERGY EQUILIBRIUM THEORY; QUARTERNARY FILMS; STRAINED FILMS; SUPERTHIN FILMS;

LIQUID PHASE EPITAXY;

EID: 0030562036 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00445-9 Document Type: Article

Times cited : (1)

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