Specific Heat of a Doped Kondo Semiconductor (Ce1-xLax)3Bi4Pt 3

Journal of the Physical Society of Japan

Volumn 65, Issue 4, 1996, Pages 1131-1132

  Shiina, Ryousuke ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Doping; Kondo semiconductor; Specific heat

Indexed keywords

EID: 0030559105     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.65.1131     Document Type: Article

References (7)

1. M. F. Hundley, P. C. Canfield, J. D. Thompson, Z. Fisk and J. M. Lawrence: Phys. Rev. B 42 (1990) 6842.
2. J. D. Thompson, W. P. Beyermann, P. C. Canfield, Z. Fisk, M. F. Hundley, G. H. Kwei, R. S. Kwok, A. Lacerda, J. M. Lawrence and A. Severing: Transport and Thermal Properties of f-Electron Systems, ed. G. Oomi, H. Fujii and T. Fujita (Plenum, New York, 1993) p. 35.
3. S. Nishigori, H. Goshima, T. Suzuki, T. Fujita, G. Nakamoto, T. Takabatake, H. Fujii and J. Sakurai: Physica. B 186-188 (1993) 406.
4. P. Schlottmann: Phys. Rev. B 46 (1992) 998.
5. G. Kotliar and E. Ruckenstein: Phys. Rev. Lett. 57 (1986) 1362.
6. R. Shiina: J. Phys. Soc. Jpn. 64 (1995) 702.
7. The magnitude of the gap is experimentally estimated as 70-130 K.