Electrical Resistivity of Doped Mott Insulators V2-yO3

Journal of the Physical Society of Japan

Volumn 65, Issue 4, 1996, Pages 905-907

  Nishimoto, Satoshi ^a   Moriya, Tôru ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Electrical resistivity; Mott transition; Spin fluctuation; Weakly antiferromagnetic metal

Indexed keywords

EID: 0030554198     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.65.905     Document Type: Article

References (15)

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13. Q are chosen, the calculated values for the resistivity are somewhat smaller than the experimental values.
14. L. F. Mattheiss: J. Phys.: Condens. Matter 6 (1994) 6477.
15. R. Hulbina and T. M. Rice: Phys. Rev. B 51 (1995) 9253.